found: Work cat.: Hopkins, J.B. Fabrication and characteristics of microwave backward diodes in indium arsenide, 1969.
found: Dictionary of inorganic compounds, 1992:v. 1, p. 93 ("Indium arsenide (InAs) ... Has zinc blende or wurtzite struct. Obt. from elements in 3 zone furnace, or by vapour phase transport using InCl(subscript)3. Important semiconductor for use at low temps. ...")
found: Encyclopedia of inorganic chemistry, 1994:v. 1, p. 197 ("The so-called Group 13-15 (III-V) compounds are of great interest in the semiconductor industry. These include arsenides of boron, aluminum, gallium, and indium")
