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Bibframe Instance

Title
SiGe and Si strained-layer epitaxy for silicon heterostructure devices
Identified By
Lccn: 2007030343
Isbn: 9781420066852 (alk. paper)
Isbn: 1420066854 (alk. paper)
Local: ocn159822251 (assigner)
Local: 159822251 (assigner)
Local: 156812711 (assigner)(canceled or invalid)
Supplementary Content
Includes bibliographical references and index.
Publisher description
Could not render: bf:electronicLocator
Note
Physical details: ill.
"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.
Dimensions
26 cm.
Extent
1 v. (various pagings)
Provision Activity
Publication: Florida 2008
Publication: Boca Raton: CRC Press/Taylor & Francis; c2008
Responsibility Statement
edited by John D. Cressler
Issuance
single unit